By Peter W. Hawkes
Advances in Imaging & Electron Physics merges long-running serials-Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy. The sequence positive aspects prolonged articles at the physics of electron units (especially semiconductor devices), particle optics at low and high energies, microlithography, picture technology and electronic photograph processing, electromagnetic wave propagation, electron microscopy, and the computing equipment utilized in a lot of these domains.
- Contributions from best professionals
- Informs and updates on the entire newest advancements within the field
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Extra info for Advances in imaging and electron physics
2010; Schuh & de Jonge, 2014), and the inﬂuence of 50-nm-thick SiN membranes can be disregarded. For thinner liquid layers, the resolution becomes limited by beam broadening caused by interaction of the electron beam with the SiN membrane and the liquid layer above the focal plane. The material below the focal plane merely contributes to the background noise. An SiN membrane with thickness of 50 nm is recommended to maintain robustness of the liquid cell and to avoid excessive bulging. , 2012; Ramachandra, Demers, & de Jonge, 2013).
Rajh, T. (2013). In situ visualization of self-assembly of charged gold nanoparticles. Journal of the American Chemical Society, 135, 3764–3767. , Zonnevylle, A. , Narvaez, A. , Effting, A. , Voorneveld, P. , Lucas, M. , Hardwick, J. , Wepf, R. , & Hoogenboom, J. P. (2013). Simultaneous correlative scanning electron and high-NA ﬂuorescence microscopy. PLoS One, 8. e55707. , & Marco Garrido, S. (2014). Wet-STEM tomography: Principles, potentialities, and limitations. Microscopy and Microanalysis, 20, 366–375.
The ﬁrst step is to ﬁnd the lateral (x,y) position of the window at low magniﬁcation. Once light comes through, it needs to be checked if the liquid layer is sufﬁciently thin. This can be done by monitoring the transmitted current. , 2010). The number of electrons N scattered into an angle larger than the opening angle b of the ADF detector can be calculated by the following equation (Reimer & Kohl 2008): t tsðbÞNA N ¼ N0 1 À exp À ; (1) ¼ N0 1 À exp À A l where N0 is the number of incoming electrons, t the sample thickness, l the mean free path length, s(b) the partial elastic cross section, NA Avogadro’s number, and A the atomic weight.
Advances in imaging and electron physics by Peter W. Hawkes