Download e-book for iPad: Circuits at the Nanoscale: Communications, Imaging, and by Krzysztof Iniewski

By Krzysztof Iniewski

ISBN-10: 1420070622

ISBN-13: 9781420070620

Circuits for rising applied sciences past CMOS New interesting possibilities are abounding within the box of physique region networks, instant communications, facts networking, and optical imaging. according to those advancements, top-notch foreign specialists in and academia current Circuits on the Nanoscale: Communications, Imaging, and Sensing. This quantity, specified in either its scope and its concentration, addresses the cutting-edge in built-in circuit layout within the context of rising structures. A needs to for a person occupied with circuit layout for destiny applied sciences, this publication discusses rising fabrics that could take method functionality past typical CMOS. those contain Silicon on Insulator (SOI), Silicon Germanium (SiGe), and Indium Phosphide (InP). 3-dimensional CMOS integration and co-integration with Microelectromechanical (MEMS) know-how and radiation sensors are defined besides. issues within the e-book are divided into complete sections on rising layout concepts, mixed-signal CMOS circuits, circuits for communications, and circuits for imaging and sensing. Dr. Krzysztof Iniewski is a director at CMOS rising applied sciences, Inc., a consulting corporation in Vancouver, British Columbia. His present learn pursuits are in VLSI ciruits for scientific functions. He has released over a hundred examine papers in foreign journals and meetings, and he holds 18 foreign patents granted within the usa, Canada, France, Germany, and Japan. during this quantity, he has assembled the contributions of over 60 world-reknown specialists who're on the best in their box on this planet of circuit layout, advancing the financial institution of information for all who paintings during this intriguing and burgeoning quarter.

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Extra info for Circuits at the Nanoscale: Communications, Imaging, and Sensing

Example text

1 Effects of Layout on Frequency and Leakage . . . . . . . . . . . . . .. . . . . . . . 2 D2D Variations . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 WID Variations . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Inferring Process Parameters .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Conclusion ..

1 INTRODUCTION CMOS device scaling has increased the impact of process variability to the point where it is now regarded as a major roadblock to further scaling [1]. The control of process fluctuations has not kept pace with rapidly shrinking device dimensions. Furthermore, the drive to improve performance has enticed device and circuit designers to operate at conditions that are more sensitive to variability. Oxide thickness, threshold voltage, and gate length variations have become more significant as the manufacturing process has entered sub-100 nm technology nodes.

1 Effects of Layout on Frequency and Leakage . . . . . . . . . . . . . .. . . . . . . . 2 D2D Variations . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 WID Variations . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Inferring Process Parameters .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Conclusion .. . . .

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Circuits at the Nanoscale: Communications, Imaging, and Sensing by Krzysztof Iniewski


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