By Javeed A Munshi
Layout of Liquid-Containing Concrete constructions for Earthquake Forces
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Additional resources for Design of liquid-containing concrete structures for earthquake forces
Both types of definitions will be found useful in circuit work. The symbols VM, IM, VH, and IH used in these definitions were encountered in Figs. 14. Weak inversion. Consider first t h e weak inversion equation in t h e table (a variation of the model presented in Ref. 5). 04 x 10"12 F/cm for silicon); NB is the bulk doping concentration; Nc is the doping concentration in the channel (which is usually different from NB, since the channel is implanted). * A silicon semiconductor and a silicon dioxide insulator are assumed in the relevant formulas.
Numerous footnotes are included in the tables. Trying to read these footnotes carefully at this time might be tiring and confusing. They can be passed over lightly for now, just so that the reader becomes aware of their existence. Their content will be appreciated later, when the reader has an overview of the basic aspects of modeling. The footnotes can be found especially useful in the course of circuit design, when a particular problem happens to require special attention to the fine points that are discussed in them.
One thus might expect an exponential dependence of the "current" on shaft position and, if the analogy is valid, an exponential dependence of 1D on VGS in weak inversion in the real transistor. This expectation will indeed be bom out shortly. For large VDS values in Fig. 8 (low drain water level), concentration on the right at the level of the shaft's surface becomes negligible, and the "current" assumes a value largely independent of VDS, reaching saturation. 8 A fluid dynamical analog of MOS transistor operation in weak inversion (a and b) and moderate inversion (c).
Design of liquid-containing concrete structures for earthquake forces by Javeed A Munshi