By Paul H. Holloway, Gary E. McGuire
This publication reports the hot advances and present applied sciences used to supply microelectronic and optoelectronic units from compound semiconductors. It presents an entire evaluation of the applied sciences essential to develop bulk single-crystal substrates, develop hetero-or homoepitaxial movies, and method complicated units akin to HBT's, QW diode lasers, and so forth.
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Extra resources for Handbook of Compound Semiconductors. Growth, Processing, Characterization, and Devices
1~ (Reprinted by permission of the publisher, Electronic Letters) The importance of the GaAs-based AIGaInP material for optical devices has been mentioned in a previous section. 5 %. This LED was five times more efficient at 620 nm than AIGaAs and GaAsP LEDs. 0O6] With increasing thickness of this window layer from 5 to 15 ~m, an increased efficiency due to the effect of current spreading was obtained. Green emitters (554 nm wavelength) were fabricated representing the shortest wavelength devices yet reportexi for the AIGaInP system.
GaAs and InP based materials have most extensively been studied and find their applications in electronic and photonie devices, whereas, not as many studies have been carried out on MOCVD of narrow and wide gap materials; one reason for this may be the much more complex nature 38 Compound Semiconductors of the growth process of the latter materials. The current understaading in the MOCVD technology of these compound semiconductor layers is presented. 1 GaAs and InP Based Materials This section contains MOCVD growth lattice matched on GaAs and InP substrates; for CraAs based material, not only GaAs and AICraAs but also growth of AICmInP on CmAs substrates is considered; for InP based material besides MOCVD of InP, ternary (GaInAs) and quaternary (GaInAsP) layers the phosphorus-free AIGalnAs is also discussed and compared with the conventional GalnAsP system.
G. MiMes and C. A. ), p. 219, Adam Hilger, Toronto (1990) 65. Adamski, J. ,J. Cryst. Growth, 64:1 (1983) 66. , J. Cryst. Growth, 68:639 (1984) 67. Farges, J. , J. Cryst. Growth, 59:665 (1982) 68. Bonner, W. , J. Cryst. , 54:21 (1981) 69. , J. Electron, 10:941 (1981) 70. , lnt'l. Conf. InP and Related Materials, p. 18, Oklahoma (1989) 71. , lnt'l. Conf. InP and Related Materials, p. 8, Cardiff (1991) 28 Compound Semiconductors 72. , Int'l. Conf. InP and RelatedMaterials, Rhode Island (1992) 73. , Appl.
Handbook of Compound Semiconductors. Growth, Processing, Characterization, and Devices by Paul H. Holloway, Gary E. McGuire