Resistive Switching: From Fundamentals of Nanoionic Redox - download pdf or read online

By Daniele Ielmini, Rainer Waser

ISBN-10: 3527334173

ISBN-13: 9783527334179

With its accomplished assurance, this reference introduces readers to the large subject of resistance switching, supplying the data, instruments, and strategies had to comprehend, symbolize and follow resistive switching thoughts.
beginning with these fabrics that demonstrate resistive switching habit, the publication explains the fundamentals of resistive switching in addition to switching mechanisms and versions. An in-depth dialogue of reminiscence reliability is through chapters on reminiscence telephone constructions and architectures, whereas a bit on good judgment gates rounds off the text.
a useful self-contained publication for fabrics scientists, electric engineers and physicists facing reminiscence study and development.

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Extra resources for Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications

Example text

Here, switches P and Q are connected in parallel and initially contain the input logic states p and q. In the computational stage, pulse voltages of amplitude V set and V cond are applied to Q and P, respectively, where V set is just above the threshold for SET transition, whereas V cond is just below the same threshold. If p is 0, namely P has a high resistance, then the whole voltage V set drops across Q, which thus unconditionally switches to the set state. If p is 1, namely P has a low resistance, then the voltage drop across q is just |V set − V cond | ≈ 0, which cannot induce any change in q.

Phenomenologically, the stimulus affects an internal state variable of the element, which controls the resistance. For this reason, the resistance values are memorized by the elements, which are, therefore, also called memristive elements or devices [2]. The required switching speed and the retention times depend on the area of application and will be discussed later. The fundamental physical principles of resistive switching and, hence, the nature of the internal state variable can be manifold.

Each synapse has a characteristic conductivity, or weight, describing the strength of the coupling between presynaptic and postsynaptic neurons. Therefore, neuron computation relies on both the input signals coming by the synapses and their corresponding weights. Traditionally, electronic neural networks have been developed by integration of CMOS circuits, playing the role of the neurons, with artificial synapses consisting of Si-based floating gate cells [146] or SRAM circuits [147]. 9), which is the weighted resistive connection of two neurons.

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Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications by Daniele Ielmini, Rainer Waser


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