Silicon Carbide Materials Processing Devices - download pdf or read online

By Zhe Chuan Feng and Jian H.Zhao (Edt)

ISBN-10: 0203496493

ISBN-13: 9780203496497

ISBN-10: 0203594967

ISBN-13: 9780203594964

ISBN-10: 1591690234

ISBN-13: 9781591690238

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Kong, Appl Phys. , 62, 2953 (1993). 66. Sze, Physics of Semiconductor Devices (John Wiley & Sons: New York, 1981). 67. Patrick, Phys. , 127, 1868 (1962). 68. Tanaka, Phys. , B22, 2842 (1980). 69. Matus, Appl Phys. , 65, 1659 (1994). 70. Matsunami, Appl Phys. , 67, 2385 (1995). 71. Leibenzeder, J. Appl. , 72, 3708 (1992). 72. Palmour, Mater. Res. Soc. Symp. , 339, 595 (1994). 73. Stephani, Appl Phys. , 65, 3120 (1994). 74. Yu. Semenov, and Yu. Simakhin, Sov. Phys. , 11, 214 (1977). 75. Lanig, Appl.

Typical surface defects are small shallow depressions. 16% for epitaxial layers on the (0001)Si face with an off-angle of 8°. The epitaxial growth on the (11–20) face becomes very important, because the small channel mobility in the (0001)Si face of 4H-SiC can be dramatically improved by using the (11–20) face [85,86]. 8 SUMMARY This chapter has reviewed step-controlled epitaxial growth of SiC on off-axis SiC {0001} substrates. Step-flow growth is essential to realize polytype replication in epitaxial layers at rather low temperatures of around 1500°C without 3C-SiC inclusions.

Using an AFM (atomic force microscope) and a TEM for as-grown epitaxial layers on SiC {0001} substrates with off-angles of 3–10° along <11–20>. In AFM observations a distinctive difference in surface structures was observed on (0001)Si and (000–1)C faces. Epitaxial layers on a (0001)Si face with an off-angle of 5° of 6H-SiC yielded apparent macrosteps with a terrace width of 220–280 nm and a step height of 3–6 nm. 20 [52]. 20. Epitaxial layers on 4HSiC (0001)Si faces exhibited macrosteps with 110–160 nm width and 10–15 nm height in some regions.

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Silicon Carbide Materials Processing Devices by Zhe Chuan Feng and Jian H.Zhao (Edt)


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