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By John M. Andrews and George K. Celler (Editors)

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15 REFERENCES [1]N. Kitajima, IEDM Tech. 367(1987) [2]B. , IEDM Tech. 56(1988) C. Wong, Y. Taur, C. -H. Hsu, Digest of [3]J. Y. -C. Sun, the Intl. 17(1985) IEDM [4]J. M. Sung, C. Y. Lu, M. L. Chen, S. J. Hillenius, Tech. 447(1989) [53F. K. , IEDM Tech. 443(1989) I. Kawashima, J. Murota, J. Electrochem. [6]S. 1721(1986) Pergamon [7]H. F. 141, Press, Oxford(1969) 16 SUPERSILO/RTN: QUASI-RECESSED FIELD OXIDE AND 80 nm BIRD'S BEAK USING A SILO/RTN PROCESS P. Molle and S. Deleonibus CENG/LETI-SMSC 85X 38041 GRENOBLE CEDEX SUPERSILO/RTN is a new isolation technique based on a SILO/RTN process and subsequent deposition, oxidation and etch-back steps.

Electron Devices ED-37, 737 (1990). [2] F. , Symp. , 13 (1990). C. , Ext. Abst. Electrochem. Soc. Meeting 90-2, 453 (1990). [4] T. , IEDM Tech. , 592 (1988). [5] T. , Ext. Abst. 20th SSDM, 581 (1988). [6] W. , Symp. , 69 (1989). [7] T. , IEEE Trans. Electron Devices ED-38, 255 (1991). [8] S. , IEDM Tech. , 31 (1989). [9] S. , Ext. Abst. 21th SSDM, 141 (1989). [10] N. , Ext. Abst. 22nd SSDM, 833 (1990). [11] H. , IEDM Tech. , 651 (1990). C. , IEEE Electron Device Lett. EDL-1 1, 279 (1990). [13] M.

REFERENCES 1. D. Mathiot and J. C. Pfister, J. Apple. , 55(10), p. 3518, (1984). 2. F. F. Morehead and R. F. Lever, Appl. Phys. , 48(2), p. 151, (1986). 41 3. B. J. Mulvaney and W. B. Richardson, Appl. Phys. , 51(18), p. 1439, (1987). 4. M. Orlowski, Appl. Phys. , 53(14), p. 1323, (1988). 5. M. E. Law and J. R. Pfiester, IEEE Trans. on Elec. , 38(2), p. 278, (1991). 6. P. B. Griffin and J. D. Plummer, International Electron Devices Meeting, Los Angeles, p. 522, 1986. 7. S. T. Ahn, P. B. Griffin, J.

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ULSI Science and Technology 1991 by John M. Andrews and George K. Celler (Editors)

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