By John M. Andrews and George K. Celler (Editors)
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15 REFERENCES N. Kitajima, IEDM Tech. 367(1987) B. , IEDM Tech. 56(1988) C. Wong, Y. Taur, C. -H. Hsu, Digest of J. Y. -C. Sun, the Intl. 17(1985) IEDM J. M. Sung, C. Y. Lu, M. L. Chen, S. J. Hillenius, Tech. 447(1989) [53F. K. , IEDM Tech. 443(1989) I. Kawashima, J. Murota, J. Electrochem. S. 1721(1986) Pergamon H. F. 141, Press, Oxford(1969) 16 SUPERSILO/RTN: QUASI-RECESSED FIELD OXIDE AND 80 nm BIRD'S BEAK USING A SILO/RTN PROCESS P. Molle and S. Deleonibus CENG/LETI-SMSC 85X 38041 GRENOBLE CEDEX SUPERSILO/RTN is a new isolation technique based on a SILO/RTN process and subsequent deposition, oxidation and etch-back steps.
Electron Devices ED-37, 737 (1990).  F. , Symp. , 13 (1990). C. , Ext. Abst. Electrochem. Soc. Meeting 90-2, 453 (1990).  T. , IEDM Tech. , 592 (1988).  T. , Ext. Abst. 20th SSDM, 581 (1988).  W. , Symp. , 69 (1989).  T. , IEEE Trans. Electron Devices ED-38, 255 (1991).  S. , IEDM Tech. , 31 (1989).  S. , Ext. Abst. 21th SSDM, 141 (1989).  N. , Ext. Abst. 22nd SSDM, 833 (1990).  H. , IEDM Tech. , 651 (1990). C. , IEEE Electron Device Lett. EDL-1 1, 279 (1990).  M.
REFERENCES 1. D. Mathiot and J. C. Pfister, J. Apple. , 55(10), p. 3518, (1984). 2. F. F. Morehead and R. F. Lever, Appl. Phys. , 48(2), p. 151, (1986). 41 3. B. J. Mulvaney and W. B. Richardson, Appl. Phys. , 51(18), p. 1439, (1987). 4. M. Orlowski, Appl. Phys. , 53(14), p. 1323, (1988). 5. M. E. Law and J. R. Pfiester, IEEE Trans. on Elec. , 38(2), p. 278, (1991). 6. P. B. Griffin and J. D. Plummer, International Electron Devices Meeting, Los Angeles, p. 522, 1986. 7. S. T. Ahn, P. B. Griffin, J.
ULSI Science and Technology 1991 by John M. Andrews and George K. Celler (Editors)